Behaviour of the charge carriers in a random force field and some problems of the electronic theory of disordered semiconductors-Reference-Cited by-同舟云学术

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Behaviour of the charge carriers in a random force field and some problems of the electronic theory of disordered semiconductors

Published:1973-10 Issue:4 Volume:3 Page:321-418
ISSN:1826-9850
Container-title:La Rivista del Nuovo Cimento
language:en
Short-container-title:La Rivista del Nuovo Cimento

Author:

Bonch-Bruevich V. L.,Mironov A. G.,Zviagin I. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF02823165.pdf

Reference159 articles.

1. S. C. Moss andJ. F. Graczyk:Proceedings of the X International Conference on Semiconductors (USAEC, 1970), p. 658.

2. D. E. Polk:Journ. Non-Cryst. Sol.,5, 365 (1971).

3. V. L. Bonch-Bruevich:Proceedings of the IX International Conference on Semiconductors, Vol.1 (Leningrad, 1968), p. 153.

4. V. L. Gurevich:Fyzika i Technika Poluprovodnikov,2, 1557 (1968).

5. A. F. Joffe andA. R. Regel:Progr. Semicond.,4, 237 (1960).

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