Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/content/pdf/10.1007/s11767-002-0062-7.pdf
Reference11 articles.
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2. T. Wang, C. Huang, P. C. Chou, S. S. Chung, T. E. Chang, Effects of hot carrier induced interface state generation in submicron LDD MOSFETs, IEEE Trans. on Electron Devices, 41(1994), 1618–1622.
3. Shin-Hwa Renn, Christine Raynaud, Jean-Luc Pelloie, Francis Balestra, A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P- channel partially and fully depleted unibond and SIMOX MOSFETs, IEEE Trans. on Electron Devices, 45(1998), 2146–2152.
4. S. P. Sinha, A. Zaleski, D. E. Ioannou, G. J. Campisi, H. L. Hughes, Hot hole induced interface states generation and annihilation in SOI MOSFET’s, IEEE Electron Device Letters, 17(1996), 121–123.
5. E. Nicollian, G. Goetzberger, Si-SiO2 interface electrical properties as determined by the metal-insulator-silicon conductance technique, Bell. Syst. Tech. J, 46(1967), 1055–1066.
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