Fundamentals of MOS Technology-Reference-Cited by-同舟云学术

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Fundamentals of MOS Technology

Published: Issue: Volume: Page:309-336
ISSN:
Container-title:Advances in Solid State Physics
language:
Short-container-title:

Author:

Goetzberger Adolf,Schulz Max

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/BFb0108576.pdf

Reference106 articles.

1. A. Goetzberger, and S. M. Sze, in Applied Solid State Science, vol. 1. 153, ed., R. Wolfe. Academic Press, New York, London (1969).

2. E. H. Nicollian, and A. Goetzberger, Bell Syst. Techn. J. 46, 1055 (1967).

3. P. V. Gray, Proc. IEEE 57, 1543 (1969).

4. A. Goetzberger, AEÜ 20, 241 (1966).

5. R. Gereth, and H.-M. Rein, Conf. Series No 12, Institute of Physics, London and Bristol (1971).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of AlNxOy/GaAs Structures Made by Plasma Ntridation of Evaporated Aluminium Films;physica status solidi (a);1986-07-16

2. Ion Implantation;Semiconducting Devices;1976

3. Electrical and Optical Properties of MIS Devices;Semiconducting Devices;1976

4. Ion implantation: A useful tool for semiconductor research;Applied Physics;1974-07

5. Field-effect transistors;Advances in Solid State Physics

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