Single-electron trapping at semiconductor interfaces-Reference-Cited by-同舟云学术

Single-electron trapping at semiconductor interfaces

Published: Issue: Volume: Page:229-242
ISSN:
Container-title:Advances in Solid State Physics 35
language:
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Author:

Schulz M.,Mueller H. H.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/BFb0107548.pdf

Reference13 articles.

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3. Kirton, M. J., M. J. Uren, S. Collins, M. Schulz, A. Karmann and K. Scheffer, Semicond. Sci. Technol. 4 (1989) 1116.

4. Farmer, K. R., Discrete conductance fluctuations and related phenomena in Metal-Oxide-Silicon device structures, in: “Insulating Films on Semiconductors, INFOS 91”, eds. W. Eccleston and M. J. Uren, Adam Hilger, Bristol (1991) 1.

5. Cobden, D. H., and M. J. Uren, in: “Proceedings of the International Conference on Insulating Films on Semiconductors INFOS 93”, Delft, The Netherlands, P. Balk ed., Elsevier Science Publishers, Amsterdam (1993) 163.

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