Bipolar and Junction Field-Effect Transistors
Author:
Publisher
Springer New York
Link
http://link.springer.com/content/pdf/10.1007/978-1-4939-2751-7_5
Reference34 articles.
1. A. B. Phillips, Transistor Engineering, McGraw-Hill, 1962.
2. B. El-Kareh, Fundamentals of Semiconductor Processing Technologies, Kluwer Academic Publishers,1995.
3. P. J. Coppen and W.T. Matzen, “Distribution of recombination current in emitter-base junctions of silicon transistors,” IEEE Trans. Electron Dev., ED-9 (1), 75-81, 1962.
4. C. T. Sah, “Effect of surface recombination and channel on p-n junction and transistor characteristics,” IEEE Trans. Electron Dev., ED-9 (1), 94-108, 1962.
5. C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier generation and recombination in p-n junctions and p-n junction characteristics,” IRE Trans. Electron Dev., 45 (9) 1228-1238, 1957.
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