A model for peak-gain coefficient in InGaAsP/InP semiconductor laser diodes-Reference-Cited by-同舟云学术

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A model for peak-gain coefficient in InGaAsP/InP semiconductor laser diodes

Published:1988-03 Issue:2 Volume:20 Page:153-163
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Ghafoori-Shiraz H.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02098267.pdf

Reference7 articles.

1. H. C. CASEY and M. B. PANISH, ‘Heterostructure Laser, Part A’ (Academic Press, New York, 1978).

2. H. KRESSEL and J. K. BUTLER, ‘Semiconductor Lasers and Heterojunction LEDs’ (Academic Press, New York, 1977).

3. F. STERN,J. Appl. Phys. 47 (1976) 5382.

4. N. UCHIDA, Opto-Electronics Conference OEC '86, Tech. Dig. Tokyo/Japan (July 1986) p. 126.

5. N. K. DUTTA,J. Appl. Phys. 52 (1981) 55.

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