Switching behaviour of unijunction transistor in the presence of magnetic field-Reference-Cited by-同舟云学术

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Switching behaviour of unijunction transistor in the presence of magnetic field

Published:1986-09 Issue:3 Volume:27 Page:459-468
ISSN:0304-4289
Container-title:Pramana
language:en
Short-container-title:Pramana - J Phys

Author:

Agrawal S L,Swami R

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF02846871.pdf

Reference16 articles.

1. Agrawal S L 1982Magnetic field effects in silicon unijunction transistors and their applications, Ph.D. thesis, Banaras Hindu University

2. Agrawal S L and Swami R 1981J. Phys. D14 283

3. Agrawal S L and Swami R 1985Proc. IV National Seminar on physics of semiconductors and devices. Jaipur (Meerut: Puneet Press) p. 194

4. Cristoloveanu S 1981aInternational Workshop on the physics of semiconductor devices, Abstract-poster papers (New Delhi: Allied Publishers) p. 179

5. Cristoloveanu S 1981bPhys. Status Solidi A65 281

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1. Frequency-output sensors-transducers based on unijunction transistors;Journal of Communications Technology and Electronics;2014-03

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