Mixed Layer Problem and Quasineutral Limit of the Bipolar Drift-Diffusion Model with Different Mobilities
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Mathematics (miscellaneous)
Link
https://link.springer.com/content/pdf/10.1007/s00025-022-01711-7.pdf
Reference21 articles.
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2. Fang, W., Ito, K.: Global solution of the time-dependent drift-diffusion semiconductoe equations. J. Differential Equations 123, 523–566 (1995)
3. Gasser, I.: The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors. NoDEA Nonlinear Differential Equations Appl. 8(3), 237–249 (2001)
4. Gasser, I., Hsiao, L., Markowich, P.A., Wang, S.: Quasineutral limit of a nonlinear drift-diffusion model for semiconductor models. J. Mathematical Anal. And Appl. 168, 184–199 (2002)
5. Gasser, I., Levermore, D., Markowich, P.A., Schmeiser, C.: The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model. European J. Appl. Math. 12, 497–512 (2001)
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