Effect of electron irradiation on excess currents of GaSb tunnel diodes-Reference-Cited by-同舟云学术

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Effect of electron irradiation on excess currents of GaSb tunnel diodes

Published:1984-07 Issue:7 Volume:27 Page:620-624
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Alekseeva Z. M.,Vyatkin A. P.,Glushchenko V. A.,Dmitriev A. P.,Zakharevskii A. I.,Parkhomenko R. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00897462.pdf

Reference18 articles.

1. B. M. Bui, É. I. Zavaritskaya, and N. V. Savaritskii, Fiz. Tverd. Tela,9, No. 11, 3212 (1967).

2. R. P. Nanavati and M. Eisencraft, IEEE Trans. Electron. Dev.,15, No. 10, 796 (1968).

3. T. S. Denprovskaya, V. M. Stuchebnikov, and A. É. Yunovich, Fiz. Tekh. Poluprovodn.,3, No. 5, 681 (1969).

4. N. Kh. Abrikosov, V. N. Kolokol'tsev, and E. V. Skudnova, in: Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1977), pp. 177, 183.

5. N. Kh. Abrikosov, V. N. Kolokol'tsev, et al., Fiz. Khim. Obrabot. Mater.,4, 44 (1977).

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