Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities-Reference-Cited by-同舟云学术

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Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities

Published:1987-09 Issue:9 Volume:30 Page:721-725
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Krivov M. A.,Malisova E. V.,Nikiforova M. P.,Starikov A. N.,Khludkov S. S.,Grigor'ev Yu. A.,Egorova O. L.,Osvenskii V. B.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00897466.pdf

Reference13 articles.

1. V. Seki, H. Watanabe, and Matsui, J. Appl. Phys.,49, 822 (1978).

2. Yu. N. Bol'sheva, Yu. A. Grigor'ev, et al., Kristallografiya,27, No. 4, 722 (1982).

3. Yu. F. Biryulin, N. V. Ganina, et al., Fiz. Tekh. Poluprovodn.,19, No. 6, 1104 (1985).

4. E. V. Solov'eva, M. G. Mil'vidskii, and N. V. Ganina, Fiz. Tekh. Poluprovodn.,16, No. 10, 1810 (1982).

5. E. V. Solov'eva, N. S. Rytova, et al., Fiz. Tekh. Poluprovodn.,15, No. 11, 2141 (1981).

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