IR detection by depletion of trapped charge in localized impurity states of an extrinsic semiconductor-Reference-Cited by-同舟云学术

IR detection by depletion of trapped charge in localized impurity states of an extrinsic semiconductor

Published:1984-02 Issue:2 Volume:5 Page:197-205
ISSN:0195-9271
Container-title:International Journal of Infrared and Millimeter Waves
language:en
Short-container-title:Int J Infrared Milli Waves

Author:

Coon D. D.,Gunapala S. D.,Karunasiri R. P. G.,Muehlhoff H. -M.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/BF01417650.pdf

Reference9 articles.

1. J. R. Banavar, D. D. Coon, and G. E. Derkits, Phys. Rev. Lett.41, 576 (1978).

2. D. D. Coon, S. Gunapala, R. P. G. Karunasiri, H.-M. Muehlhoff and G. Derkits, to be published in SPIE Proceedings Vol. 395 (1983).

3. D. D. Coon, S. Gunapala, R. P. G. Karunasiri and H.-M. Muehlhoff, ?An integrating IR detector,? to be published in SPIE Proceedings Vol. 430 (1983).

4. S. Chaudhuri, D. D. Coon, and G. E. Derkits, Appl. Phys. Lett.37, 111 (1980).

5. J. R. Banavar, D. D. Coon, and G. E. Derkits, Appl. Phys. Lett.34, 94 (1979).

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