Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide-Reference-Cited by-同舟云学术

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Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

Published:2016-10 Issue:6 Volume:59 Page:757-761
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Kalygina V. M.,Petrova Yu. S.,Prudaev I. A.,Tolbanov O. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-016-0833-5.pdf

Reference8 articles.

1. R. Wakabayashi, T. Oshima, M. Hattori, et al., Int. Workshop on Gallium Oxide and Related Materials (Abstract Book), Kyoto (Japan), abstract No. C6 (2015).

2. A. N. Zarubin, V. M. Kalygina, Yu. S. Petrova, et al., Fiz. Tekh. Poluprovodn., 47, No. 8, 1137–1143 (2013).

3. B. L. Sharma and R. K. Purokhit, Semiconductor Heterojunctions [Russian translation], Sov. Radio, Moscow (1979).

4. A. Kuramata, T. Masui, K. Koshi, et al., Int. Workshop on Gallium Oxide and Related Materials (Abstract Book), Kyoto (Japan), abstract No. B2 (2015).

5. K. Akaiwa, K. Kaneko, and S. Fujita, Int. Workshop on Gallium Oxide and Related Materials (Abstract Book), Kyoto (Japan), abstract No. E8 (2015).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and optimization of SnOx thin film by solution method at low temperature;Superlattices and Microstructures;2020-03

2. Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering;Russian Physics Journal;2018-03

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