Analysis of the photoluminescence spectra of Cd x Hg1–x te heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy-Reference-Cited by-同舟云学术

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Analysis of the photoluminescence spectra of Cd x Hg1–x te heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy

Published:2013-01 Issue:8 Volume:55 Page:910-916
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovskii A. V.,Gorn D. I.,Izhnin I. I.,Izhnin A. I.,Goldin V. D.,Mikhailov N. N.,Dvoretskii S. A.,Sidorov Yu. G.,Yakushev M. V.,Varavin V. S.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-013-9900-3.pdf

Reference17 articles.

1. A. Rogalski, Infrared Detectors, CRC Press, Taylor & Fransis Group, New York, 2011.

2. M. Breivik, еt al., J. Phys.: Conf. Series, 100, 042041 (2008).

3. C. R. Tonheim, еt al., J. Phys.: Conf Series, 100, 042024 (2008).

4. R. Haakenaasen, еt al., J. Electron. Mater., (2010). – DOI: 10.107//s11664-010-1211-7.

5. K. D. Mynbaev, et al., Pis’ma v Zh. Teor. Fiz., 36, No. 23, 70 (2010).

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1. Numerical Modeling of Graded Bandgap Long Wavelength Infrared HgCdTe Avalanche Photodiodes;IEEE Transactions on Electron Devices;2022-07

2. Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe;Infrared Physics & Technology;2021-05

3. Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors;Journal of Electronic Materials;2019-05-16

4. Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures;Applied Nanoscience;2018-04-10

5. Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator;Russian Physics Journal;2018-03

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