Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures-Reference-Cited by-同舟云学术

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Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures

Published:2024-05 Issue:2 Volume:91 Page:378-383
ISSN:0021-9037
Container-title:Journal of Applied Spectroscopy
language:en
Short-container-title:J Appl Spectrosc

Author:

Gogorishvili I.,Tutunjyan A.,Sakharova T.,Melikyan M.,Khuchua N.,Kuparashvili D.

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10812-024-01730-y.pdf

Reference17 articles.

1. I. D. Burlakov, L. Ya. Grinchenko, A. I. Dirochka, and N. B. Zaletaev, Usp. Prikl. Fiz., 2, No. 2, 131–161 (in Russian) (2014).

2. A. Rogalski, Infrared Phys. Technol., 43, 187–210 (2002).

3. N. P. Khuchua, A. A. Tutunjyan, N. D. Dolidze, T. B. Sakharova, R. G. Melkadze, L. P. Sanikidze, M. B. Ksaverieva, M. N. Melikyan, and I. G. Gogorishvili, Georgian Eng. News, No. 1, 48–55 (2023).

4. Martin Bitter, InP/InGaAs Pin Photodiode Arrays for Parallel Optical Interconnects and Monolithic InP/InGaAs pin/HBT Optical Receivers for 10-Gb/s and 40-Gb/s, Doctoral Thesis (2000), pp. 13–30.

5. Yu. M. Noikin and P. V. Makhno, Physical Principles of Optical Communicatio. Electronic Manual, Ch. 5.1 (2011) [in Russian], https://foos.sfedu.ru/glava5/5.1.html).

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