High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets-Reference-Cited by-同舟云学术

High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets

Published: Issue: Volume: Page:31-78
ISSN:
Container-title:Thin Films and Heterostructures for Oxide Electronics
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Author:

Schlom D.G.,Billman C.A.,Haeni J.H.,Lettieri J.,Tan P.H.,Held R.R.M.,Völk S.,Hubbard K.J.

Publisher

Springer-Verlag

Link

http://link.springer.com/content/pdf/10.1007/0-387-26089-7_2.pdf

Reference227 articles.

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5. S. Zaima, T. Furuta, Y. Yasuda and M. Iida, J. Electrochem. Soc. 137, 1297 (1990).

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