Pac studies of ion implanted silicon-Reference-Cited by-同舟云学术

Pac studies of ion implanted silicon

Published:1987-04 Issue:1-4 Volume:35 Page:715-718
ISSN:0304-3843
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Forkel D.,Meyer F.,Witthuhn W.,Wolf H.,Deicher M.,Uhrmacher M.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF02394483.pdf

Reference7 articles.

1. H. Frauenfelder and R.M. Steffen in: Alpha-, Beta-, and Gamma-Ray Spectroscopy, Vol. 2, ed. K. Siegbahn (North-Holland, Amsterdam 1968)

2. M. Deicher, G. Gruebel, E. Recknagel, Th. Wichert, Proc. Ion Beam Modification of Materials, Catania, 1986, to be published

3. J. Bourgoin, M. Lannoo in: Point Defects in Semiconductors II, Springer series in Solid State Sciences, Vol. 22 (Springer, Berlin, Heidelberg, New York, 1981), p. 269.

4. H. Wolf, D. Forkel, M. Iwatschenko-Borho, S. Malzer, F. Meyer, and W. Witthuhn, this conference

5. M. Deicher, G. Gruebel, E. Recknagel, Th. Wichert, and D. Forkel, Nucl. Instr. and Meth. in Phys. Rev. B13 (1986), 266.

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