The investigation of inhomogeneities in silicon single crystals by the method of photoelectric conductivity-Reference-Cited by-同舟云学术

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The investigation of inhomogeneities in silicon single crystals by the method of photoelectric conductivity

Published:1966-07 Issue:7 Volume:16 Page:583-589
ISSN:0011-4626
Container-title:Czechoslovak Journal of Physics
language:en
Short-container-title:Czech J Phys

Author:

Gallas M.,Kopešťanský J.,Kyslík V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF01695155.pdf

Reference11 articles.

1. Gallas M. et al.: Research Report čKD-NLP-TZ-405, Praha 1964.

2. Fistul V. I., OrŽevskij O. P.: Zav. lab.11 (1963), 1327.

3. Smith R. A.: Semiconductors, Cambridge Univ. Press 1959, 195.

4. Tauc J.: Czech. J. Phys.5 (1955), 176.

5. Frank H.: Czech. J. Phys.6 (1956), 433.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Probing of Inhomogeneities inn‐GaAs with Applications to the Acoustoelectric Instabilities;Journal of Applied Physics;1968-10

2. Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors;Japanese Journal of Applied Physics;1968-09

3. An application of beta conductivity to measurement of resistivity distribution;Journal of Physics E: Scientific Instruments;1968-06

4. An Electron Beam Method of Measuring Resistivity Distribution in Semiconductors;Japanese Journal of Applied Physics;1967-08

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