Fabrication and Electric Properties of (Ba,Rb)BiO3 Base Transistor with In2O3 as a Collector Barrier-Reference-Cited by-同舟云学术

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Fabrication and Electric Properties of (Ba,Rb)BiO3 Base Transistor with In2O3 as a Collector Barrier

Published:1997 Issue: Volume: Page:1291-1294
ISSN:
Container-title:Advances in Superconductivity IX
language:
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Author:

Makita Takehiko,Hashimoto Katsufumi,Yamada Tomoyuki

Publisher

Springer Japan

Link

http://link.springer.com/content/pdf/10.1007/978-4-431-68473-2_150

Reference7 articles.

1. Yoshida A, Tamura H, Takeuchi H, Hasuo S (1991) Appl. Phys. Lett. 59: 1242.

2. Frank DJ, Brandy MJ, Davidson A (1985) IEEE Trans. Magn. MAC-21. p 721

3. Toda F, Ogihara M, Abe H (1992) Int. Symp. Superconductivity (ISS’92) p. 1087

4. Toda F, Abe H (1994) Jpn. J. Appl. Phys. 33: L318

5. Makita T, Ogihara M, Abe H (1992) Int. Symp. Superconductivity (ISS’92) p. 919

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