Utilization of Interface Potential
Author:
Yoshitake Michiko
Reference16 articles.
1. Yoshitake M, Song W, Libra J, Mašek K, Šutara F, Matolín V, Prince KC (2008) Interface termination and band alignment of epitaxially grown alumina film on Cu–Al alloy. J Appl Phys 103:033707-1-033707–5
2. Nemšák S, Skála T, Yoshitake M, Tsud N, Prince KC, Matolín V (2010) A photoelectron spectroscopy study of ultra-thin epitaxial alumina layers grown on Cu(111) surface. Surf Sci 604:2073–2077
3. Alber U, Mullejans H, Ruhle M (1999) Wetting of copper on α-Al2O3 surfaces depending on the orientation and oxygen partial pressure. Micron 30:101–108
4. Merlin V, Eustathopoulos M (1995) Wetting and adhesion of Ni-Al alloys on α-Al203 single crystals. J Mater Sci 30:3619–3624
5. Chantain D, Chabert F, Ghetta V, Fouletier J (1994) New experimental setup for wettability characterization under monitored oxygen activity: II, wettability of sapphire by silver-oxygen melts. J Am Ceram Soc 77:197–201