Design and Applications of Dependable Nonvolatile Memory Systems

Author:

Tanakamaru Shuhei,Takeuchi Ken

Publisher

Springer Japan

Reference21 articles.

1. R. Fackenthal et al., A 16 Gb ReRAM with 200 MB/s write and 1 GB/s read in 27 nm technology, in IEEE International Solid-State Circuits Conference (ISSCC) (2014), pp. 338–339

2. S. Kang et al., Performance trade-offs in using NVRAM write buffer for flash memory-based storage devices. IEEE Trans. Comput. 58(6), 744–758 (2009)

3. J.-H. Yoon et al., Chameleon: a high performance flash/FRAM hybrid solid state disk architecture. IEEE Comput. Archit. Lett. 7(1), 17–20 (2008)

4. H.-G. Lee, High-performance NAND and PRAM hybrid storage design for consumer electronics. IEEE Trans. Consum. Electron. 56(1), 112–118 (2010)

5. H. Fujii et al., x11 performance increase, x6.9 endurance enhancement, 93% energy reduction of 3D TSV-integrated hybrid ReRAM/MLC NAND SSDs by data fragmentation suppression, in IEEE Symposium on VLSI Circuits (2012), pp. 134–135

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