Lattice disorder in alumina single crystals produced by ion bombardment-Reference-Cited by-同舟云学术

Lattice disorder in alumina single crystals produced by ion bombardment

Author:

Naguib H. M.,Singleton J. F.,Grant W. A.,Carter G.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

Reference46 articles.

1. See for example:J. W. Mayer, L. Eriksson, andJ. S. Davies, ?Ion Implantation in Semiconductors? (Academic Press, New York, 1970).

2. See for example: 1-Int. Conf. on ?Ion Implantation in Semiconductors?. Thousand Oaks, 1970, inRad. Effects (1970).

3. See for example: European Conf. on ?Ion Implantation? (Peregrinus, London, 1970).

4. See for example: 2-Int. Conf. on ?Ion Implantation in Semiconductors?. Eds. I Ruge and J. Graul (Springer-Verlag, Berlin, 1971).

5. See for example: Int. Conf. on ?Radiation Effects in Semiconductors?, held at Albany, New York (1970), inRad. Effects (1971).

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4. Surface swelling of sapphire induced by MeV and GeV heavy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05

5. Bombardment-induced compositional change in MgAl2O4, MgO and A12O3;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03