Si DX centers in GaAs at large hydrostatic pressures-Reference-Cited by-同舟云学术

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Si DX centers in GaAs at large hydrostatic pressures

Published:1991-07 Issue:1 Volume:53 Page:26-31
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Haller E. E.,Wolk J. A.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00323430.pdf

Reference27 articles.

1. For a historical account see: H.J. Queisser: The Conquest of the Microchip (Harvard University Press, Cambridge MA 1988)

2. D.V. Lang, R.A. Logan: Phys. Rev. Lett. 39, 635 (1977)

3. R.J. Nelson: Appl. Phys. Lett. 31, 351 (1977)

4. D.J. Chadi, K.J. Chang: Phys. Rev. Lett. 61, 873 (1988);

5. Phys. Rev. B 39, 10063 (1989)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LOCAL HYDROGEN AND DEUTERIUM VIBRATIONAL MODES IN Si-DOPED GaAs;International Journal of Modern Physics C;2002-06

2. Local Hydrogen Vibrational Modes in GaAs doped with Chalcogenides;Crystal Research and Technology;2001-11

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