Formation of structure defects responsible for the long-term photomemory in the Ge-GeO2 system-Reference-Cited by-同舟云学术

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Formation of structure defects responsible for the long-term photomemory in the Ge-GeO2 system

Published:1981-02 Issue:2 Volume:24 Page:181-185
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Karyagin S. N.,Kozlov S. N.,Plotnikov G. S.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00895370.pdf

Reference14 articles.

1. A. N. Arkhipov, M. I. Elinson, A. G. Zhdan, V. B. Sandomirskii, and A. A. Sigarev, Fiz. Tekh. Poluprovodn.,11, 51 (1977).

2. T. Shiozaki, K. Narumiya, and A. Kawabata, Appl. Phys. Lett.,29, 77 (1976).

3. L. G. Paritskii and S. M. Ryvkin, Fiz. Tekh. Poluprovodn.,4, 764 (1970).

4. V. M. Lisina, É. V. Kulikov, and P. M. Podvigalkin, Zh. Nauchn. Prikl. Fotogr. Kinematogr.,14, 423 (1969).

5. P. K. Kashkarov and S. N. Kozlov, Mikroelektronika (Akad. Nauk SSSR),5, 535 (1976).

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