InP-based RTD/HEMT monolithic integration
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s12209-010-1374-6.pdf
Reference11 articles.
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2. Shimizu N, Nagatsuma T, Waho T et al. InGaAs/AlAs resonant tunneling diodes with switching time of 1.5 ps[J]. Electronics Letters, 1995, 31(19): 1694–1697.
3. Alan C S, Kao Y H, Yuan T Z. Nine-state resonant tunneling diode memory[J]. IEEE Electron Device Letters, 1992, 13(9): 479–481.
4. Pacha C, Auer U, Burwick C et al. Threshold logic circuit design of parallel adders using resonant tunneling devices[ J]. IEEE Transactions on VLSI Systems, 2000, 8(5): 558–572.
5. Matsuzaki H, Osaka J, Itoh T et al. Monolithic integration of resonant tunneling diodes, Schottky barrier diodes and 0.1-μm-gate high electron mobility transistors for highspeed ICs[J]. Japanese Journal of Applied Physics, 2001, 40(4A): 2186–2190.
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