Role of n-ZnO Layer on the Improvement of Interfacial Properties in ZnO/InGaN p-i-n Solar Cells
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/article/10.1007/s12209-017-0058-x/fulltext.html
Reference33 articles.
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3. Wu J, Walukiewich W, Yu KM et al (2003) Superior radiation resistance of In1−x Ga x N alloys: a full-solar-spectrum photovoltaic materials system. J Appl Phys 94(10):6477–6482
4. Nanishi Y, Satio Y, Yamaguchi T (2003) RF-molecular beam epitaxy growth and properties of InN and related alloys. J Appl Phys 42(5A):2549–2559
5. Vazquez M, Algora C, Rey-Stolle I et al (2007) III-V concentrator solar cell reliability prediction based on quantitative LED reliability data. Prog Photovolt 15(6):477–491
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1. High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell;Physica B: Condensed Matter;2021-12
2. Tunable Syngas Synthesis from Photocatalytic CO2 Reduction Under Visible-Light Irradiation by Interfacial Engineering;Transactions of Tianjin University;2020-07-29
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