1. Nicolson S T, Tomkins A, Tang K W et al. A 1. 2 V, 140 GHz receiver with on-die antenna in 65 nm CMOS [C]. In: IEEE Radio Frequency Integrated Circuits Symposium. Atlanta, USA, 2008.
2. Khanpour M, Tang K W, Garcia P et al. A wideband Wband receiver front-end in 65 nm CMOS [J]. IEEE Journal of Solid-State Circuits, 2008, 43(8): 1717–1730.
3. Xu Z, Gu Q J, Chang M C F. 200 GHz CMOS amplifier working close to device fT [J]. Electronics Letters, 2011, 47(11): 639–641.
4. Momeni O. A 260 GHz amplifier with 9.2 dB gain and -3.9 dBm saturated power in 65 nm CMOS [C]. In: IEEE International Solid-State Circuits Conference. San Francisco, USA, 2013.
5. Lu C, Mahmoudi R, von Roermund A H M et al. A 107 GHz LNA in 65 nm CMOS with inductive neutralization and slow-wave transmission lines [C]. In: IEEE Symposium on Communications and Vehicular Technology. Eindhoven, the Netherlands, 2012.