Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system
Author:
Funder
fast wireless charging technology
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://link.springer.com/content/pdf/10.1007/s43236-022-00393-2.pdf
Reference25 articles.
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2. Li, S., Tao, C.: Optimization of T-type compensation network for a certain power fluctuation tolerance of the dynamic wireless power transmission. In: 2018 IEEE 4th Southern Power Electronics Conference (SPEC), Singapore, Singapore, 1–5 (2018)
3. Anderson, J.A., Kolar, J.W.: Accurate calorimetric switching loss measurement for 900 V 10 m $\Omega$ SiC Mosfets. IEEE Trans. Power Electron. 32(12), 8963–8968 (2017)
4. Millan, J., Godignon, P., Rebollo, J.: A survey of wide bandgap power semiconductor devices. IEEE Trans. Power Electron. 29(5), 2155–2163 (2014)
5. Hu, B., et al.: Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Trans. Device Mater. Relib. 17(4), 727–737 (2017)
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