Plasma-assisted etching-Reference-Cited by-同舟云学术

Plasma-assisted etching

Published:1982-03 Issue:1 Volume:2 Page:1-41
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Coburn J. W.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00566856.pdf

Reference193 articles.

1. S. M. Irving,Solid State Technol. 14(6), 47 (1971).

2. S. M. Irving, K. E. Lemons, and G. E. Bobos, U.S. Patent No. 3,615,956 (filed 1969).

3. R. L. Bersin and M. Singleton, U.S. Patent No. 3,879, 597.

4. N. Hosokawa, R. Matsuzaki, and T. Asamaki,Jpn. J. Appl. Phys. Suppl., 2, Pt. 1, 435 (1974).

5. G. C. Schwartz, L. B. Zielinski, and T. Schopen, inEtching, M. J. Rand and H. G. Hughes, eds. (Electrochem. Soc. Symposium Series, Princeton, New Jersey, 1976), p. 122.

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