AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices-Reference-Cited by-同舟云学术

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AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices

Published:2005-09-15 Issue: Volume: Page:363-374
ISSN:1438-4329
Container-title:Advances in Solid State Physics
language:
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Author:

Steinhoff Georg,Baur Barbara,von Ribbeck Hans-Georg,Wrobel Günter,Ingebrandt Sven,Offenhäusser Andreas,Stutzmann Martin,Eickhoff Martin

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/11423256_29

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment;Materials Science in Semiconductor Processing;2021-01

2. High sensitivity detection of glucose with negatively charged gold nanoparticles functionalized the gate of AlGaN/GaN High Electron Mobility Transistor;Sensors and Actuators A: Physical;2020-09

3. An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor;RSC Advances;2020

4. AlGaN/GaN open-gate high electron mobility transistors for glucose detection;Eleventh International Conference on Signal Processing Systems;2019-12-31

5. High-frequency detection of cell activity ofPhysarum polycephalumby a planar open gate AlGaN/GaN HEMT;Journal of Physics D: Applied Physics;2014-09-18

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