Author:
Wang Jong Hoe,Im Jong-In,Lee Kyoung-Hee
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Reference13 articles.
1. Ammon, W., Dornberger, E., Oelkrug, H. and Weidner, H., “The Dependence of Bulk Defects on the Axial Temperature Gradient of Silicon Crystals during Czochralski Growth,”J. Cryst. Growth,151, 273 (1995).
2. Brown, R. A., Maroudas, D. and Sinno, T., “Modelling Point Defect Dynamics in the Crystal Growth,”J. Cryst. Growth, 137, 12 (1994).
3. Dornberger, E. and Ammon, W., “The Dependence of Ring-Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals,”J. Electrochem. Soc.,143, 1648 (1996).
4. Hasebe, M., Takeoka, Y., Shinoyama, S. and Naito, S., “Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers,”Jpn. J. Appl. Phys.,28, L1999 (1989).
5. Kim, K. H., Choi, I. S., Wang, J. H. and Lee, H. W., "Transient Behavior of Point Defect in CZ Silicon Crystals,”Theories and Applications of Chem. Eng.,8, 5190 (2002).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献