Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02146-z.pdf
Reference21 articles.
1. Belwanshi V (2021) Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor. J Comput Electron 20:668–680. https://doi.org/10.1007/s10825-020-01592-5
2. Tian B, Shang H, Zhao L et al (2021) Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design. Microsyst Technol 27:3083–3093. https://doi.org/10.1007/s00542-020-05175-z
3. Mehmood Z, Haneef I, Udeea F (2020) Material selection for optimum design of MEMS pressure sensors. Microsyst Technol 26:2751–2766. https://doi.org/10.1007/s00542-019-04601-1
4. Verma P, Punetha D, Pandey SK (2020) Sensitivity Optimization of MEMS Based Piezoresistive Pressure Sensor for Harsh Environment. SILICON 12:2663–2671. https://doi.org/10.1007/s12633-019-00362-8
5. Kumar SS, Pant BD (2015) Polysilicon thin film piezoresistive pressure microsensor: design, fabrication and characterization. Microsyst Technol 21:1949–1958. https://doi.org/10.1007/s00542-014-2318-1
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