Author:
Kumar Gagnesh,Agrawal Sunil
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P h (2002) Carbon nanotubes as schottky barrier transistors. Phys Rev Lett 89(10):106801
2. Guo J, Datta S, Lundstrom M (2004) A numerical study of scaling issues for schottky-barrier carbon nanotube transistors. IEEE Trans Electron Dev 51(2):172–177
3. Jooq MKQ, Mir A, Mirzakuchaki S, Farmani A (2020) Design and performance analysis of wrap-gate cntfet-based ring oscillators for iot applications. Integration 70:116–125
4. Samal A, Tripathi SL, Mohapatra SK (2020) A journey from bulk mosfet to 3 nm and beyond. Transactions on Electrical and Electronic Materials, 1–13
5. Vandana B, Kumar DJ, Mohapatra SK, Lata TS (2018) Impact of channel engineering (si1-0.25 ge0 25) technique on gm (transconductance) and its higher order derivatives of 3d conventional and wavy junctionless finfets (jlt). Facta Universitatis-Series: Electronics and Energetics 31(2):257–265
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献