1. The International Technology Roadmap for Semiconductor (2009) Emerging Research Devices
2. Weste E (2003) Principles of CMOS VLSI design, A system perspective, chap 2. Pearson Education, Upper Saddle River
3. Current MI, Bedell SW, Malik IJ, Feng LM, Henley FJ (2000) What is the future of sub-100 nm CMOS: Ultra shallow junctions or ultrathin SOI. Solid State Technol 43:66–77
4. Taur Y (2001) Analytical solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs. IEEE Trans Electron Dev 48(12):2861–2869
5. Spedo S, Fiegna C (2002) Comparison of and asymmetric double-gate MOSFETs-tunneling currents and hot electrons. In: Proceedings of IEEE semiconductor device on research symposium, pp 601–604