Electronic Noise Analysis of Source-Engineered Phosphorene/Si Heterojunction Dopingless Tunnel-FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02019-5.pdf
Reference22 articles.
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2. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479:329–337. https://doi.org/10.1038/nature10679
3. Verreck D, Verhulst AS, Groeseneken G (2016) The tunnel field-effect transistor. 1–28. https://doi.org/10.1002/047134608X.W8333.This
4. Kim SH, Kam H, Hu C, Liu TK (2009) Germanium-source tunnel field effect transistors with record high ION/IOFF. In: 2009 Symposium on VLSI Technology, pp 178–179
5. Dewey G, Chu-Kung B, Boardman J et al (2011) Fabrication, characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing. Tech Dig - Int Electron Devices Meet IEDM 3:785–788. https://doi.org/10.1109/IEDM.2011.6131666
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