Optimization of Design Space Parameters in Tunnel Fet for Analog/Mixed Signal Application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01591-6.pdf
Reference26 articles.
1. Zhijun Lyu , Hongliang Lv , Yuming Zhang , Yimen Zhang, Yi Zhu, Jiale Sun, Miao Li, and Bin Lu “A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction” IEEE Trans Electron Devices, Vol. 68, No. 3, 2021
2. Bennett RKA, Yoon Y (2021) IEEE Using “Anisotropic Insulators to Engineer the Electrostatics of Conventional and Tunnel Field-Effect Transistors”. IEEE Trans Electron Devices 68(2):February
3. Dwivedi P, Singh R, Sengar BS, Kumar A, Garg V (2021) A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor. IEEE Sensors J 21(3)
4. Peng C, Yang Z, Lin Z, Wu X, Li X (2021) Reverse Bias Current Eliminated, Read-Separated, and Write-Enhanced Tunnel FET SRAM. IEEE Trans Circ Syst—Ii: Express Briefs 68(1)
5. Duan X, Zhang J, Wang S, Li Y, Xu S, Hao Y (2018) A High-Performance Gate Engineered InGaN Dopingless Tunnel FET. IEEE Trans Electron Devices 65(3):1223
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-Consistent LCAO Based DFT Analysis of High-k Spacers and its Assessment on Gate-Stacked NCFET for Improved Device-Circuit Performance;Silicon;2024-06-29
2. Design and Implementation of Silicon-Doped Ferrogate Stacking JL-VTFET in MIC Sepic Convertor;Nano;2024-06-28
3. DFT based atomic modeling and temperature analysis on the RF and VTC curve of high-k dielectric layer-assisted NCFET;Physica Scripta;2023-12-29
4. DFT-based Atomic Calculation of Si-doped HfO2 and Effect of its Negative Capacitance on Analog/RF, and VTC Parameters of MOSFET;Silicon;2023-11-13
5. Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization;Microelectronics Journal;2023-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3