Performance Evaluation of FinFET Device Under Nanometer Regime for Ultra-low Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01772-x.pdf
Reference19 articles.
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2. Zhang W, Fossum JG, Mathew L, Du Y (2005) Physical insights regarding design and performance of independent-gate FinFETs. IEEE Trans Electron Devices 52(10):2198–2206
3. Tang X, De VK, Meindl JD (1997) Intrinsic MOSFET parameter fluctuations due to random dopant placement. IEEE Trans Very Large Scale Integr VLSI Syst 5(4), 369–376
4. [Online]. Available: http://www.eetimes.com/electronics-news/4373195/Intel-FinFETs-shape-revealed
5. Abd El Hamid H, Guitar JR, Kilchytska V, Flandre D, Iniguez B (2007) A 3-D analytical physically based model for the sub threshold swing in undoped trigate FinFETs. IEEE Trans Electron Devices 54(9):2487–2496
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