Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Roy K, Mukhopadhyay S, Meimand HM (2003) Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits. Proc IEEE 91(2):305–327
2. Hisamoto D et al (2000) FinFET-a self-aligned double-gate MOSFET scalable to 20nm. IEEE Trans Electron Dev 47(12):2320–2325
3. Colinge J-P et al (2008) FinFETs and other multi-gate transistors. Springer 73
4. Yang M, Gusev EP, Ieong M, Gluschenkov O, Boyd DC, Chan KK, Kozlowski PM, D’Emic CP, Sicina RM, Jamison PC et al (2003) Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics. IEEE Electron Device Lett 24(5):339–341
5. Schuegraf, Klaus F., C. C. King, and Chenming Hu. "Impact of polysilicon depletion in thin oxide MOS technology." 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers. IEEE, 1993
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. FinFET to GAA MBCFET: A Review and Insights;IEEE Access;2024
2. An 84K-295K Small Signal Circuit Model for Fin Field Effect Transistor;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
3. Investigating single event transients of advanced fin based devices for inclusion in ICs;AEU - International Journal of Electronics and Communications;2021-05