Determination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer
Author:
Funder
Dicle Üniversitesi
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00779-6.pdf
Reference84 articles.
1. Aksoy Ö, Uzun İ, Topal G, Ocak YS, Çelik Ö, Batibay D (2019) Schottky diodes based on the new chitin derivatives. Polym Sci Ser A 61:242–252
2. Kahng D (1963) Conduction properties of the Au-n-type—Si Schottky barrier. Solid State Electron 6:281–295
3. Sze SM, Crowell CR, Kahng D (1964) Photoelectric determination of the image force dielectric constant for hot electrons in Schottky barriers. J Appl Phys 35:2534–2536
4. Padovani FA, Sumner GG (1965) Experimental study of gold‐gallium arsenide Schottky barriers. J Appl Phys 36:3744–3747
5. Cowley AM (1966) Depletion capacitance and diffusion potential of gallium phosphide Schottky‐barrier diodes. J Appl Phys 37:3024–3032
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