An Analytical Modeling of Conical Gate-All-Around Tunnel Field Effect Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00611-1.pdf
Reference22 articles.
1. Choi WY, Park BG, Lee JD, Lui TJK (2007) Tunneling field effect transistors(TFETs)with subthreshold swing(SS) less than 60mV/dec. IEEE Electron Devices Letters 28:743–745
2. Wang P, Hilsenbeck K, Nirschl T, Oswald M, Stepper C, Weiss M, Dchmitt-Landsiedel D, Hansch W (2004) Complementary tunneling transistor for low-power applications. Solid State Electron 48:2281–2286
3. Verhulst AS, Vandenberghe WG, Maex K, Groeseneken G (2007) Tunnel field-effect transistor without gate-drain overlap. Appl Phys Lett 91:053102–053105
4. Appenzellrt J, Lin YM, Knoch J, Avouris P (2004) Band-to-band tunneling in carban nanotube field effect transistors. Physi Rev Lett 93:196
5. Usha C, Vimala P (2015) A Tunneling FET exploiting in various Structure and Different Models: A Review. Int. Conf. Innov. Inf.Embedded Commun. Syst.(ICIIECS) 1–6
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