Improving Short Channel Effects by Reformed U-Channel UTBB FD SOI MOSFET: A Feasible Scaled Device
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00861-z.pdf
Reference33 articles.
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3. Chen J, Luo J, Wu Q, Chai Z, Huang X, Wei X, Wang X (2012) Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs. Nuclear Instrum Methods Phys Res 272:128–131
4. Ali A. Orouji, M. Jagadesh Kumar (2006) A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain,” Microelectronic Engineering, pp 409–414
5. Chang L, Choi Y-K, Ha D, Ranade P, Xiong S, Bokor J, Hu C, King T-J (2003) Extremely scaled silicon Nano-CMOS devices. Proc IEEE 9:1860–1873
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