An Empirical Model for Bulk Electron Mobility in Si at Cryogenic Temperatures-Reference-Cited by-同舟云学术

An Empirical Model for Bulk Electron Mobility in Si at Cryogenic Temperatures

Published:2022-07-30 Issue:1 Volume:15 Page:563-570
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Agrahari Yash,Dutta Aloke K.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-02035-5.pdf

Reference28 articles.

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2. Patterson RL, Hammoud A, Dickman JE, Gerber S, Elbuluk M, Overton E (2002) Electronics for deep space cryogenic applications. J Phys IV (Proc) 12(3):207–210

3. Wong HY (2020) Calibrated Si mobility and incomplete ionization models with field dependent ionization energy for cryogenic simulations. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, pp 193–196

4. Klaassen DBM (1992) A unified mobility model for device simulation – I. Model equations and concentration dependence. Solid-State Electron 35(7):953–959

5. Klaassen DBM (1992) A unified mobility model for device simulation – II. Temperature dependence of carrier mobility and lifetime. Solid-State Electron 35(7):961–967

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