Analytical and Compact Modeling Analysis of a SiGe Hetero-Material Vertical L-Shaped TFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-01009-3.pdf
Reference28 articles.
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3. Choi WY, Park B-G, Lee JD, Liu T-JK (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28(8):743–745. https://doi.org/10.1109/LED.2007.901273
4. Yasin Khatami, Kaustav Banerjee, “Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy- Efficient Digital Circuits,” IEEE Trans Electron Devices, VOL. 56, NO. 11, pp.2752–2760, NOVEMBE R2009https://doi.org/10.1109/TED.2009.2030831
5. Krishnamohan, Tejas, Donghyun Kim, Shyam Raghunathan, and Krishna Saraswat. "Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope." In 2008 IEEE Int Electron Devices Meet, pp. 1–3. IEEE, 2008. https://doi.org/10.1109/IEDM.2008.4796839
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