Linearity Performance Analysis Due to Lateral Straggle Variation in Hetero-Stacked TFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00189-3.pdf
Reference27 articles.
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3. Appenzeller J, Radosavljević M, Knoch J, Avouris P (2004) Tunneling versus thermionic emission in one-dimensional semiconductors. Phys Rev Lett 92
4. Chander S, Bhowmick B, Baishya S (2015) Heterojunction fully depleted SOI-TFET with oxide/source overlap. Superlattice Microst 86:43–50
5. Fan ML, Hu VPH, Chen YN, Hsu CW, Su P, Chuang CT (2015) Investigation of Backgate-biasing effect for ultrathin-body III-V heterojunction tunnel FET. IEEE Trans Electron Devices 62:107–113
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