Drain Current Modeling of Tunnel FET using Simpson’s Rule
Author:
Funder
CERD
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01328-5.pdf
Reference36 articles.
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2. Wang H, Chang S, Hu Y, He H, He J, Huang Q, et al. (2014) A novel barrier controlled tunnel FET. IEEE Elect Dev Lett 35(7):798–800. https://doi.org/10.1109/LED.2014.2325058
3. Asra R, Shrivastava M, Murali KV, Pandey RK, Gossner H, Rao VR (2011) A tunnel FET for vDD scaling below 0.6 V with a CMOS-comparable performance. IEEE Trans Elect Dev 58(7): 1855–1863. https://doi.org/10.1109/TED.2011.2140322
4. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337. https://doi.org/10.1038/nature10679
5. Schenk A et al (1993) Rigorous theory and simplified model of the band-to-band tunneling in silicon. Solid State Elect 36(1):19–34. https://doi.org/10.1016/0038-1101(93)90065-X
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