Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01906-1.pdf
Reference25 articles.
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3. Sowmya K, Balamurugan NB, Parvathy V (2019) A 2-D Modeling of Fe doped dual material gate AlGaN/AIN/GaN high electron mobility transistors for high frequency applications. Int J Electron Commun 103:46–56
4. Pon A, Sivanaga K, Poorna V, Ramesh R (2019) Effect of interface trap charges on the performance of asymmetric dielectric modulated dual short gate tunnel FET. AEU-Int J Electron Commun 102:1–8
5. Bonam S, Panigrahi AK, Kumar CH, Vanjari SRK, Singh SG (2019) Post-CMOS Compatible Engineered Ultra-thin Au passivated Cu-Cu thermocompression bonding for 3D IC and heterogeneous integration applications. IEEE Trans Compon Packag Manuf Technol 9(7):1227–1234
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