Device Design, Simulation and Qualitative Analysis of GaAsP/ 6H-SiC/ GaN Metal Semiconductor Field Effect Transistor-Reference-Cited by-同舟云学术

Device Design, Simulation and Qualitative Analysis of GaAsP/ 6H-SiC/ GaN Metal Semiconductor Field Effect Transistor

Published:2022-01-06 Issue:14 Volume:14 Page:8449-8454
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Balaji B.,Rao K. Srinivasa,Aditya M.,Sravani K. Girija

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01665-z.pdf

Reference23 articles.

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2. Srinivasa Rao K, Kumar PA, Guha K, Sailaja BVS, Vineetha KV, Baishnab KL, Girija Sravani K. Design and simulation of fixed–fixed flexure type RF MEMS switch for reconfigurable antenna. Microsyst Technol, to be published. https://doi.org/10.1007/s00542-018-3983-2

3. Thalluri LN, Guha K, Karumuri SR, Prasad G, Sravani G, Sastry K, Kanakala A, Babu P (2020) Perforated serpentine membrane with AlN as dielectric material shunt capacitive RF MEMS switch fabrication and characterization. Microsyst Technol. https://doi.org/10.1007/s00542-020-04755-3

4. Vijaya Prasad K, Kishore PVV, Srinivasa Rao O (2019) Skeleton based viewinvariant human action recognition using convolutional neural networks. Int J Recent Technol Eng 8(2):4860–4867

5. Sravani KG, Prathyusha D, Srinivasa Rao K, Ashok Kumar P, Sai Lakshmi G, Chand CG, Naveena P, Thalluri LN, Guha K (2019) Design and performance analysis of low pull-in voltage of dimple type capacitive RF MEMS shunt switch for Ka- Band. IEEE Access 7:44471–44488

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