Novel Fast-switching LIGBT with Single-Step Low-k Dielectric Layer and Assistant-Depletion Trench
Author:
Funder
National Basic research program of china
Science Foundation for Distinguished Young Scholars of Shaanxi Province
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01686-8.pdf
Reference32 articles.
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3. Nakagawa A, Funaki H, Yamaguchi Y, Suzuki F (1999) Improvement in lateral IGBT design for 500V 3A one chip inverter ICs. In: Proceedings of 11th International Symposium on Power Semiconductor Devices and ICs (ISPSD 1999) pp 321–324. https://doi.org/10.1109/ISPSD.1999.764125
4. Leung Yk, Kuehne SC, Huang VSK, Nguyen CT, Paul AK, Plummer JD, Wong SS (1996) High voltage, high speed lateral IGBT in thin SOI for power IC. IEEE International SOI Conference Proceedings pp 132–133. https://doi.org/10.1109/SOI.1996.552529
5. Chan WWT, Sin JKO, Wong SS (1995) An effective Cross-Talk Isolation Structure for power IC Applications. Proceedings of International Electron Devices Meeting (IEDM 1995) pp 971–974. https://doi.org/10.1109/IEDM.1995.499378
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