Design and Optimization of LNA Amplifier Based on HEMT GaN for X-Band Wireless-Communication and IoT Applications

Author:

Helali Abdelhamid,Gassoumi Moujahed,Gassoumi Malek,Maaref Hassen

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference23 articles.

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4. Ando Y, Okamoto Y, Miyamoto H, Hayama N, Nakayama T, Kasahara K, Kuzuhara M (2001) A110-W AlGaN/GaN heterojunction PET on thinned sapphire substrate. IEDM Technical Digest, Washington, DC, pp 381–384

5. Xiang H, Dora Y, Chini A, Heikman S, Keller S, Mishra UK (2004) IEEE Electron Device Lett 25:161

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