Current Transport, Photosensitive, and Dielectric Properties of PVA/n-Si Heterojunction Photodiode
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01260-8.pdf
Reference48 articles.
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2. Baraz N, Yücedağ İ, Azizian-Kalandaragh Y, Ersöz G, Orak İ, Altındal Ş, Akbari B, Akbari H (2017) Electric and dielectric properties of au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10–200 kHz. J Electron Mater 46:4276–4286. https://doi.org/10.1007/s11664-017-5363-6
3. Bilkan Ç, Altındal Ş, Azizian-Kalandaragh Y (2017) Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer structures. Phys B Condens Matter 515:28–33. https://doi.org/10.1016/j.physb.2017.04.002
4. Bilkan Ç, Badali Y, Fotouhi-Shablou S, Azizian-Kalandaragh Y, Altındal Ş (2017) On the temperature dependent current transport mechanisms and barrier inhomogeneity in au/SnO2–PVA/n-Si Schottky barrier diodes. Appl Phys A Mater Sci Process 123:560. https://doi.org/10.1007/s00339-017-1168-y
5. Ashery A, Gad S, Shaban H, Gaballah AEH (2021) Heterostructure device based on Graphene oxide/TiO2/n-Si for optoelectronic applications. ECS J Solid State Sci Technol 10:021002. https://doi.org/10.1149/2162-8777/abe1d9
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