Pressure Sensors Using Si/ZnO Heterojunction Diode
Author:
Funder
Science and Engineering Research Board
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01177-2.pdf
Reference24 articles.
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2. Li C, Fang G, Li J, Ai L, Dong B, Zhao X (2008) Effect of seed layer on structural properties of ZnO nanorod arrays grown by vapor-phase transport. J Phys Chem C 112:990–995
3. Shashikant Sharma,A.Sumathi, C. Periasamy, “ Photodetection properties of ZnO/Si :A Simulation Study”, IETE Technical Review,.https://doi.org/10.1080/02564602.2016.1145558, 2016
4. Shen WJ, Wang J, Wang QY, Duan Y, Zeng YP (2006) Structural and optical properties of Zn films on Si substrates using a γ-Al2 O3 buffer layer. J Phys D Appl Phys 39:269–273
5. Chen ZH, Tang YB, Liu Y, Yuan GD, Zhang WF, Zapien JA, Bello I, Zhang WJ, Lee CS, Lee ST (2009) “ZnO nanowire arrays grown on Al:ZnO buffer layers and their enhanced electron field emission,” J. Appl. Phys., vol. 106, pp. 064303–1–064303-06
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